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李清庭Ching-Ting Lee 講座教授Experienced Chair Professor

  • Education

    • B.S. of Electrical Engineering Department of the National Cheng Kung University, Taiwan, in 1972
    • M.S. of Electrical Engineering Department of the National Cheng Kung University, Taiwan, in 1974
    • Ph.D. of Electrical Engineering Department from the Carnegie-Mellon University, Pittsburgh, PA, in 1982

    Professional Experience

    • Chung Shan Institute of Science and Technology
    • Professor, Institute of Optical Sciences, National Central University
    • Dean, College of Electrical Engineering and Computer Science, National Cheng Kung University
    • Chair professor, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
    • Director General, Dept. of Eng. & Applied Sciences, National Science Council
    • Vice president, Yuan Ze University

    Research Area

    • Solar cells, 
    • Nano electrooptic devices, 
    • Organic light-emitting diodes, 
    • GaN-based light-emitting diodes and electronic devices, 
    • III-V semiconductor lasers, 
    • Photodetectors and high-speed electronic devices, 
    • Their associated integration for electrooptical integrated circuits

  • Jurnal Papers

    1. K. C. Chang, T. H. Yeh, H. Y. Lee, C. T. Lee, “High performance perovskite solar cells using multiple hole transport layer and modulated FAxMA1−xPbI3 active layer”, J. Mater. Sci.: Mater. Electron., vol. 31, pp. 4135–4141, Jan. (2020).
    2. T. H. Yeh, C. K. Tsai, S. Y. Chu, H. Y. Lee, and C. T. Lee, “Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer”, Opt. Express, vol. 28, no, 5/2, pp. 6433-6442, Mar. (2020).
    3. T. H. Yeh, H. Y. Lee, and C. T. Lee, “Performance improvement of perovskite solar cells using vanadium oxide interface modification layer”, J. Alloy. Compd., vol. 822, 153620, May (2020).
    4. C. T. Lee and J. C Guo, “Fin-gated nanochannel array gate-recessed AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors”, IEEE Trans. Electron Devices, vol. 67, no. 5, pp. 1939-1945, May (2020).
    5. S. Y. Chu, H. Y. Wang, C. T. Lee, H. Y. Lee, K. L. Laing, W. H. Kuo, Y. H. Fang, and C. C. Lin, “Improved color purity of monolithic full color micro-LEDs using distributed Bragg reflector and blue light absorption material”, Coatings, vol. 10, no. 5, pp. 436-1-436-9, May 2020.
    6. H. Y. Lee, S. W. Yen, and C. T. Lee, “Polymer hybrid white quantum dots light-emitting diodes with nanostructured electron injection layer”, Opt. Express, vol. 28, no, 12/8, pp. 17299-17306, Jun. (2020).
    7. H. Y. Lee, P. S. Su, C. T. Lee, “Micromesh-structured flexible polymer white organic light-emitting diodes using single emissive layer of blended polymer and quantum dots”, Org. Electron., vol. 82, pp. 105722-1-105722-4, July (2020).
    8. H. Y. Lee, C. H. Lin, and C. T. Lee, “Whole metal Oxide p-i-n deep ultraviolet light-emitting diodes using i-Ga₂O₃ active emissive film”, IEEE Photon. Technol. Lett., vol 32, no 15, pp. 941-943, Aug. (2020).
    9. T. H. Yeh, S. Y. Chu, H. Y. Lee, and C. T. Lee, “Performance improvement of nitrogen dioxide gas sensors based on novel p-n heterojunction gold black/VOx bi-sensing membranes”, Mater. Sci. Semicond. Process, vol. 115, pp. 105125-1-105125-6, Aug. (2020).
    10. C. H. Lin and C. T. Lee, “Ga2O3-based solar-blind deep ultraviolet light-emitting diodes”, J. Lumines., vol. 224, pp. 117326-1-117326-4, Aug. (2020).
    11. J. J. Jia, C. C. Lin, C. T. Lee, “Scaling effect in gate-recessed AlGaN/GaN fin-nanochannel array MOSHEMTs”, IEEE Access, vol. 8, pp. 158941-158946, Sep. (2020).
    12. S. Y. Chu, M. X. Shen, T. H. Yeh, C. H. Chen, C. T. Lee, and H. Y. Lee, “Investigation of Ga2O3-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system”, Sensors, vol. 20, no. 21, 6159, Oct. (2020).
    13. H. Y. Lee, Y. Y. Ho, C. T. Lee, “Electrical and optical properties of annealed AlSnZnO films deposited using radio frequency magnetron cosputtering system”, J. Alloy. Compd., vol. 842, 156009, Nov. (2020).
    14. H. Y. Lee, C. Y. Cheng, C. T. Lee, “Bottom gate thin-film transistors using parallelly lateral ZnO nanorods grown by hydrothermal method”, Mater. Sci. Semicond. Process., vol. 119, pp. 105223-1-105223-7, Nov. (2020).
    15. T. H. Yeh, P. H. Chen, C. Y. Lin, Y. T. Tseng, W. C. Chen, C. C. Lin, T. C. Chang, C. T. Lee, and H. Y. Lee, “Enhancing threshold switching characteristics and stability of vanadium oxide-based selector with vanadium electrode”, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 5059-5062, Nov. (2020).
    16. T. C. Wang, T. H. Yeh, S. Y. Chu, H. Y. Lee, and C. T. Lee, “Developed diamond wire sawing technique with high slicing ability for multicrystalline silicon wafers”, Mater. Manuf. Process., vol. 35, pp. 1727-1731, Nov. (2020).
    17. L. Y. Jian, C. T. Lee, H. Y. Lee, “Performance improvement of NO2 gas sensor using rod-patterned tantalum pentoxide-alloyed indium oxide sensing membranes”, IEEE Sens. J., vol. 21, no. 2, pp. 2134-2139, Jan. (2021).
    18. H. Y. Lee, J. J. Jian, C. T. Lee, “Quadruple gate-recessed AlGaN/GaN fin-nanochannel array metal-oxide-semiconductor high-electron mobility transistors”, IEEE Trans. Electron Devices, vol. 68, no. 1, pp. 42-48, Jan. (2021).
    19. A. T. T. Pham, P. T. N. Vo, H. K. T. Ta, H. T. Lai, V. C. Tran, T. L. H. Doan, A. T. Duong, C. T. Lee, P. K. Nair, Y. A. Zulueta, T. B. Phan, and S. D. N. Luu, “Improved thermoelectric power factor achieved by energy filtering in ZnO: Mg/ZnO hetero-structures”, Thin Solid Films, vol. 721, pp. 138537, Mar. (2021).
    20. H. Y. Lee, T. W. Chang, E. Y. Chang, N. Rorsman, C. T. Lee, “Fabrication and characterization of GaN-based fin-channel array metal-oxide-semiconductor high-electron mobility transistors with recessed-gate and Ga₂O₃ gate insulator layer”, IEEE J. Electron Devices Soc., vol. 9, pp. 393-399, Mar. (2021).
    21. H. Y. Lee, T. W. Chang, and C. T. Lee, “AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using Ga2O3 gate dielectric layer grown by vapor cooling condensation system”, J. Electron. Mater., vol. 50, no. 6, pp. 3748–3753, Apr. (2021).
    22. J. J. Jian, H. Y. Lee, E. Y. Chang, N. Rorsman, and C. T. Lee, “Investigation of multiple-mesa-nanochannel array GaN-based MOSHEMTs with Al2O3 gate dielectric layer”, ECS J. Solid State Sci. Technol., vol. 10, no. 5, pp. 055017, May (2021).
    23. D. Anandan, H. W. Yu, C. T. Lee, C. F. Dee, A. A. Hamzah, and E. Y. Chang, “Effect of flow rate scaling on SAE-InAs crystal phase and integration of self-catalyzed InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD”, ECS J. Solid State Sci. Technol., vol. 10, no. 7, pp. 071011-1- 071011-6, Jul. (2021).
    24. H. Y. Lee, C. H. Lin, C. C. Wei, J. C. Yang, E. Y. Chang, and C. T. Lee, “AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure”, IEEE Trans. Electron Devices, vol. 68, no. 8, pp. 3768–3774, Aug. (2021).
    25. J. S. Wu, C. C. Lee, C. H. Wu, M. L. Kao, Y. C. Weng, C. Y. Yang, Q. H. Luc, C. T. Lee, D. Ueda, and E. Y. Chang, “E-mode GaN MIS-HEMT using ferroelectric charge trap gate stack with low dynamic on-resistance and high Vth stability by field plate engineering”, IEEE Electron Device Lett., vol. 42, no. 9, pp. 1268–1271, Sep. 2021.
    26. H. Y. Lee, D. S. Liu, J. I. Chyi, E. Y. Chang, C. T. Lee, “Lattice-matched AlInN/GaN/AlGaN/GaN heterostructured-double-channel metal-oxide-semiconductor high-electron mobility transistors with multiple-mesa-fin-channel array”, Materials, vol. 14, no.19, pp. 5474-1–5474-7, Oct. 2021.
    27. D. Anandan, H. W. Yu, E. Y. Chang, S. K. Singh, V. Nagarajan, C. T. Lee, C. F. Dee, D. Ueda, “Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD”, Mater. Sci. Semicond. Process., vol. 135, pp. 106103-1–106103-9, Nov. (2021).
    28. J. J. Jian, H. Y. Lee, E. Y. Chang, and C. T. Lee, “Investigation of fin-gated nanochannel array structured-AlGaN/GaN MOSHEMTs with SiO2 gate oxide layer”, Coatings, vol. 11, no.12, pp. 1494-1–1494-8, Dec. 2021.
    29. H. Y. Lee, Y. H. Ju, J. I. Chyi, and C. T. Lee, “Performance comparison of lattice-matched AlInN/GaN/AlGaN/GaN double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array”, Materials, vol. 15, no.1, pp. 42-1–42-9, Jan. 2022.
    30. H. Y. Lee, C. H. Lin, and C. T. Lee, “Fabrication and characterization of AlGaN/GaN enhancement-mode MOSHEMTs with fin-channel array and hybrid gate-recessed structure and LiNbO3 ferroelectric charge trap gate stack structure”, IEEE Trans. Electron Devices, vol. 69, no. 2, pp. 500–506, Feb. 2022.
    31. S. Y. Chu, T. H. Yeh, C. T. Lee, and H. Y. Lee, “Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors”, Mater. Sci. Semicond. Process, vol. 142, pp. 106471-1–106471-7, May 2022.
    32. H. Y. Lee; H. C. Wang; and C. T. Lee, “Whole metal oxide-based deep ultraviolet LEDs using Ga2O3-Al2O3:Ga2O3 multiple quantum wells”, IEEE Photon. Technol. Lett., vol. 34, no. 12, pp. 621–624, Jun. 2022.
    33. C. Y. Yang, C. H. Chung, W. Yu, C. J. Ma, S. R. Wu, A. Dixit, C. T. Lee, and E. Y. Chang, “A Comprehensive Study of Total Ionizing Dose effect on the electrical performance of the GaN MIS-HEMT”, IEEE Trans Device Mater Reliab., vol. 22, no. 2, pp. 276–281, Jun. 2022.
    34. L. T. Hieu, C. H. Chiang, D. Anandan, C. F. Dee, A. A. Hamzah, C. T. Lee, C. H. Lin, and E. Y. Chang, “Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate”, Semicond. Sci. Technol., vol. 37, no. 7, pp. 075012-1–075012-7, Jun. 2022.
    35. X. X. Zheng, C. Wang, J. H. Huang, J. Y. Huang, D. Ueda, K. Pande, C. F. Dee, C. T. Lee, and E. Y. Chang, “Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition”, Thin Solid Films, vol. 754, pp. 139295-1–139295-8, Jul. 2022.
    36. P. Y. Tsai, H. T. N. Nguyen, V. Nagarajan, C. H. Lin, C. F. Dee, S. C. Chen, H. C. Kuo, C. T. Lee and E. Y. Chang, “Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer”, ECS J. Solid State Sci. Technol., vol. 11, no.8, pp. 085005-1–085005-5, Aug. 2022.

  • Conference Papers

    1. C. T. Lee, “Indium gallium zinc aluminum oxide films and application in thin-film transistors”, Advanced Materials Lecture Series”, International Association of Advanced Materials Fellow Lecture, Sweden, July. 8, 2020.
    2. H. J. Hsieh, J. C. Guo, T. W. Chang, and C. T. Lee, “Investigation of Multiple Nanochannel Array AlGaN/GaN MOSHEMTs with Photoelectrochemically Oxidized Gate Dielectric Layer”, International Electron Devices & materials symposium (IEDMS 2020), Taoyuan, Taiwan, p. 11, Oct. 15-16, 2020.
    3. H. Y. Lee, C. H. Lin, and C. T. Lee, “Ga2O3-based deep ultraviolet light-emitting diodes”, The 6th Cross-Strait Workshop on Wide Band Gap Semiconductor, Taipei, Taiwan, p. 12, Oct. 22-23, 2020.
    4. L. T. Chen, C. T. Lee, and H. Y. Lee, “Investigated performance of NO2 gas sensors using gold black/ZnO nanorod sensing membrane”, The 6th Cross-Strait Workshop on Wide Band Gap Semiconductor, Taipei, Taiwan, p. 34, Oct. 22-23, 2020.
    5. L. Y. Jian, H. Y. Lee, C. T. Lee, “Investigation of NO2 Gas Sensors with NiO Sensing membranes”, Taiwan Vacuum Society 2020 Annual Meeting (TVS-2020), Taoyuan, Taiwan, p. 33, Nov. 13, 2020.
    6. Y. X. Kao, C. Y. Liao, C. T. Lee, and H. Y. Lee, “Investigated Performance of Perovskite Solar Cells with VOx Interface Modification Layer”, Taiwan Vacuum Society 2020 Annual Meeting (TVS-2020), Taoyuan, Taiwan, p. 31, Nov. 13, 2020.
    7. L. T. Chen, M. M. Tsai, C. T. Lee, and H. Y. Lee, “Investigation of Gold Black/ZnO Nanorod Heterojunction NO2 Gas Sensors”, Taiwan Vacuum Society 2020 Annual Meeting (TVS-2020), Taoyuan, Taiwan, p. 25, Nov. 13, 2020.
    8. C. T. Lee, “Parallelly lateral ZnO nanowire growth and application in thin-film transistors”, Vebleo Webinar on Nanomedicine, Nanomaterials and Nanotechnology (3NANO), Sweden, Nov. 17, 2020.
    9. S. E. Zhong, H. C. Wang, H. Y. Lee, and C. T. Lee, “Performance Investigation of Ga2O3-based Deep Ultraviolet Light-Emitting Diodes with Multi-quantum Wells”, Optics & Photonics Taiwan, International Conference (OPTIC 2020), Taipei, Taiwan, Dec. 3-5, 2020.
    10. G. S. Chen, H. Y. Lee, and C. T. Lee, “Performance Improvement of Perovskite Solar Cells Using IBA Doping into PEDOT:PSS Hole Transportation Layer”, Optics & Photonics Taiwan, International Conference (OPTIC 2020), Taipei, Taiwan, Dec. 3-5, 2020.
    11. C. T. Lee, J. J. Jia, and H. Y. Lee, “Fin-Nanochannel devices of GaN-based Metal-Oxide-Semiconductor High-Electron Mobility Transistors”, 2021 IEEE 14th International Conference on ASIC (ASICON 2021), Kunming, p.342-343, Oct. 26-29, 2021.
    12. M. M. Tsai, W. Y. Zhe, S. Y. Chu, C. T. Lee, and H. Y. Lee, “Investigation of reduced graphene oxide/ZnO nanorod heterojunction NO2 gas sensors”, Taiwan Vacuum Society 2021 Annual Meeting (TVS-2021), Taiwan, U-050, Oct. 29, 2021.
    13. S. Y. Chu, C. T. Lee, and H. Y. Lee, “Investigation properties of Mg-doped Ga2O3 films deposited using plasma-enhanced atomic layer deposition system”, Taiwan Vacuum Society 2021 Annual Meeting (TVS-2021), Taiwan, U-049, Oct. 29, 2021.
    14. Y. S. Yeh, P. Y. Wu, S. Y. Chu, C. H. Chen, H. Y. Lee, and C. T. Lee, “High performance β-Ga2O3 MOS field-effect phototransistors”, International Electron Devices & materials symposium (IEDMS 2021), Tainan, Taiwan, p. 5, Nov. 18-19, 2021.
    15. C. N. Lee, C. H. Lin, H. J. Hsieh, and C. T. Lee, “Fin-gated nanochannel array AlGaN/GaN e-mode MOSHEMTs with LiNbO3/HfO2/Al2O3 ferroelectric gate oxide structure”, International Electron Devices & materials symposium (IEDMS 2021), Tainan, Taiwan, p. 31, Nov. 18-19, 2021.
    16. L. Y. Jian, H. Y. Lee, Y. H. Ju, J. I. Chyi, and C. T. Lee, “Lattice-matched AlInN/GaN/AlGaN/GaN heterostructured-double-channel metal-oxide-semiconductor high-electron mobility transistors”, International Electron Devices & materials symposium (IEDMS 2021), Tainan, Taiwan, p. 36, Nov. 18-19, 2021.
    17. G. L. Zhu, S. C. Weng, H. Y. Lee, and C. T. Lee, “Investigation of parallel structured Ga2O3-based metal-semiconductor-metal deep ultraviolet photodetectors”, 2021 Optics & Photonics Taiwan International Conference (OPTIC 2021), Kaohsiung, Taiwan, p. 33, Dec. 2-4, 2021.
    18. T. C. Chang, C. Y. Liao, G. S. Chen, C. T. Lee, and H. Y. Lee, “Investigation of perovskite solar cells with PC61BM electron transport layer and ZnO interface layer”, 2021 Optics & Photonics Taiwan International Conference (OPTIC 2021), Kaohsiung, Taiwan, p.37, Dec. 2-4, 2021.
    19. K. W. Jhuang, Y. Z. Chen, S. Y. Chu, C. H. Chen, H. Y. Lee, C. T. Lee, K. L. Liang, W. H. Kuo, Y. H. Fang, and C. C. Lin, “Investigated aging testing of red QDs with SiO2 layer deposited by an atomic layer deposit system”, 2021 Optics & Photonics Taiwan International Conference (OPTIC 2021), Kaohsiung, Taiwan, p. 58, Dec. 2-4, 2021.
    20. C. T. Lee and H. Y. Lee, “Vertically and Parallelly Aligned ZnO Nanorods Growth and Applications”, 2nd Global Summit and Expo on Nanotechnology and Nanomaterials (GSENN2022), Kongeriget, Danmark, p.73, Jun. 13-16, 2022.
    21. L. A. Lozano-Hernández, J. B. Doucet1, B. Reig, L. Salvagnac1, H. Y. Lee, C. T. Lee, S. Calvez, I. Séguy, V. Bardinal, “Design and optimization of a Blue fluorescent Microcavity-Organic Light-Emitting Diode (MOLED) for an algae excitation light source application”, 15th International Symposium on Flexible Organic Electronics (ISFOE22), Thessaloniki, Greece, 4-7 Jul. (2022).
    22. H. Y. Lee, and C. T. Lee, “Zinc Oxide Nanorods Growth and Application in Sensors”, Taiwan Vacuum Society 2022 Annual Meeting (TVS-2022), Taichung, Taiwan, Oct. 28, 2022.
    23. M. J. Wu, G. L. Zhu, H. Y. Lee, C. T. Lee, “Investigation of AlHfGaO films with various Al contents”, Taiwan Vacuum Society 2022 Annual Meeting (TVS-2022), Taichung, Taiwan, Oct. 28, 2022.
    24. T. C. Chang, G. L. Zhu, H. Y. Lee, C. T. Lee, “Investigation of phototransistors with aluminum oxide doped gallium hafnium oxide film grown by vapor cooling condensation system”, The 27th International Electron Devices and Materials Symposium (IEDMS 2022), Nantou, Taiwan, Oct. 28, 2022.

  • Research Project

    • 奈米多通道陣列閘極掘入氮化鋁鎵/氮化鎵增強型與空乏型鰭狀結構金氧半高電子遷移率場效電晶體之單石反相器(Monolithic inverter using multiple nanochannel array gate-recessed AlGaN/GaN enhancement mode and depletion mode fin-structured metal-oxide-semiconductor high-electron mobility field-effect transistors)

    執行期限:2019/08/01-2022/07/31

    計畫編號：MOST 108-2221-E-155-029-MY3

    • 陣列式深紫外光發光二極體之開發(Development of high performance deep-ultraviolet light-emitting diode array)

    執行期限:2019/08/01-2022/07/31

    計畫編號：MOST 108-2221-E-006-215-MY3

    • 臺瑞(SE)雙邊協議型擴充加值(add-on) 國際合作研究計畫－氮化銦鋁鎵/氮化鎵高電子遷移率電晶體和鰭式電晶體的閘極氧化層以及可靠性研究(1/5)(Gate Oxide layer and Reliability of AlGaN/GaN HEMT and FinFETs)

    執行期限:2020/10/01-2021/09/30

    計畫編號:MOST 109-2923-E-155-001

    • 臺瑞(SE)雙邊協議型擴充加值(add-on) 國際合作研究計畫－氮化銦鋁鎵/氮化鎵高電子遷移率電晶體和鰭式電晶體的閘極氧化層以及可靠性研究(2/5)(Gate Oxide layer and Reliability of AlGaN/GaN HEMT and FinFETs)

    執行期限:2021/10/01-2022/09/30

    計畫編號:MOST 110-2923-E-155-003

    • 臺瑞(SE)雙邊協議型擴充加值(add-on) 國際合作研究計畫－氮化銦鋁鎵/氮化鎵高電子遷移率電晶體和鰭式電晶體的閘極氧化層以及可靠性研究(3/5)(Gate Oxide layer and Reliability of AlGaN/GaN HEMT and FinFETs)

    執行期限:2022/10/01-2023/09/30

    計畫編號:NSTC 111-2923-E-155-001

    • 具高性能與高穩定性之薄膜式與奈米柱陣列式氧化銦基二氧化氮氣體感測器研究(Investigation of thin-film and nanorod array-structured indium oxide-based nitrogen dioxide gas sensors with high-performance and high-stability)

    執行期限:2022/08/01-2025/07/31

    計畫編號:MOST 111-2221-E-006-229-MY3

  • Awards

    Fellow of IEEE and Fellow of IET, the Outstanding Research Professor Fellowship from the National Science Council (NSC), Republic of China, distinguish service award from Institute of Electrical Engineering Society, the Optical Engineering Medal from Optical Engineering Society, Distinguish Electrical Engineering professor award from Chinese Institute of Electrical Engineering Society, and Distinguish Engineering professor award from the Chinese Institute of Engineers. He received the ASIA’s Education Excellence Awards from Le Meridien Singapore and International Association of Advanced Materials (IAAM) Fellow from Sweden

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